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SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2675
(FP7W90HVX2)
900V 7A
FEATURES
Input capacitance (Ciss) is small.
OUTLINE DIMENSIONS
Case : ITO-3P (Unit : mm)
Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION
Switching power supply of AC 240V input High voltage power supply Inverter
RATINGS
Absolute Maximum Ratings Tc = 25 Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain CurrentDC ID IDP Continuous Drain CurrentPeak) IS Continuous Source CurrentDC PT Total Power Dissipation IAR Repetitive Avalanche Current Single Avalanche Energy EAS Repetitive Avalanche Energy EAR Vdis Dielectric Strength TOR Mounting Torque Conditions Ratings -55150 150 900 30 7 14 7 55 7 160 16 2 0.8 Unit V
Pulse width10s, Duty cycle1/100
A W A mJ kV Nm
Tch = 150 Tch = 25 Tch = 25 Terminals to case,AC 1 minute Recommended torque 0.5 Nm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
HVX-2 Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranconductance Static Drain-Source On-tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions
2SK2675 ( FP7W90HVX2 )
Min. 900 Typ. Max. 250 0.1 3.6 2.5 6.0 1.5 3.0 Unit V A S V
ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V ID = 3.5A, VDS = 10V ID = 3.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 3.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 7A VDS = 25V, VGS = 0V, f = 1MHZ ID = 3.5A, RL = 43, VGS = 10V
63 1450 37 150 95 330
2.0 3.5 1.5 2.27 / nC pF 170 560 ns
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2675
14 Tc = -55C 12
Transfer Characteristics
25C
Drain Current ID [A]
10
8
100C 150C
6
4
2 VDS = 25V TYP 0 0 5 10 15 20
Gate-Source Voltage VGS [V]
2SK2675
100
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) []
10
ID = 3.5A
1
0.1
0.01
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [C]
2SK2675
6
Gate Threshold Voltage
5
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [C]
2SK2675
100
Safe Operating Area
10
Drain Current ID [A]
100s 200s 1 R DS(ON) limit 1ms
10ms 0.1 DC
Tc = 25C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
2SK2675
Transient Thermal Impedance
10
1
Transient Thermal Impedance jc(t) [C/W]
0.1
0.01 10-4 10-2
10-3
10-1
100
101
102
Time t [s]
2SK2675
100
Single Avalanche Energy Derating
Single Avalanche Energy Derating [%]
80
60
40
20
0
0
50
100
150
Starting Channel Temperature Tch [C]
2SK2675
10000
Capacitance
Ciss 1000
Capacitance Ciss Coss Crss [pF]
Coss 100
Crss
10
f=1MHz Ta=25C TYP 1 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
2SK2675
Single Avalanche Current - Inductive Load
VDD = 100V VGS = 15V 0V Rg = 40
10
IAS = 7A
Single Avalanche Current IAS [A]
EAR = 16mJ
EAS = 160mJ
1 0.1 1
10
100
Inductance L [mH]
2SK2675
100
Power Derating
80
Power Derating [%]
60
40
20
0
0
50
100
150
Case Temperature Tc [C]
2SK2675
500
Gate Charge Characteristics
20
VDS
Drain-Source Voltage VDS [V]
15 VDD = 400V 300 200V 100V 200 10 VGS
5 100 ID = 7A TYP 0 0 20 40 60 80 0 100
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400

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